| PART |
Description |
Maker |
| P-17EBH-015SXX-XX0 |
high temperature resistant nylon
|
Amphenol Corporation
|
| MPXHZ6400AC6T1 MPXHZ6400A |
Media Resistant and High Temperature Accuracy Intergrated Silicon Pressure Sensor
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| MPXHZ6115A |
(MPXHZ6115A / MPXHA6115A) Media Resistant and High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Motorola
|
| 17EHD-015SAA-030 17EHD-015SCH-030 17EHD-015SCH-232 |
15 CONTACT(S), FEMALE, D SUBMINIATURE CONNECTOR, SOLDER, SOCKET
high temperature resistant nylon
|
AMPHENOL CORP
Amphenol Corporation
|
| P-17EHD-044XXX-X00 |
high temperature resistant nylon
|
Amphenol Corporation
|
| MPXHZ6116A MPXHZ6116A6T1 MPXHZ6116A6U |
Media Resistant Integrated Silicon Pressure Sensor for Measuring Absolute Pressure, On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
| DNF18-188-M |
DISCONNECT,FEMLE NYL RoHS Compliant: Yes 1 mm2, BRASS, TIN FINISH, WIRE TERMINAL
|
Panduit, Corp.
|
| VX6 VX6-3XXH VX6-5XXH |
Thru-hole VCXO HCMOS / TTL High shock and vibration resistant
|
QUARTZCOM the communications company
|
| A3195EU A3195LLT 3195 A3195LU A3195 A3195ELT |
PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 保护，高温，霍尔效应锁存主动下拉
SENSOR IC CAC ANALOG OUT 8-DIP
PROTECTED. HIGH-TEMPERATURE. HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
Protected,High-Temperature,Oper-Collector Hall-Effect Latch(保护型，工作于高温，霍尔效应锁存器（
PROTECTED/ HIGH-TEMPERATURE/ HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
PROTECTED HIGH-TEMPERATURE HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
From old datasheet system
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ9160 FSJ9160 |
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil
|
| FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
